doc. Ing. Miroslav Kolíbal, Ph.D.
E-mail:   kolibal.m@fme.vutbr.cz  Dept.:   Institute of Physical Engineering Position:   Associate Professor Room:   A1/1726

Supervised courses:

• General Physics IV (Modern Physics) (TF4)
• Technology of Low Dimensional Structures (TNS)

Publications:

• KOLÍBAL, M.; VYSTAVĚL, T.; VARGA, P.; ŠIKOLA, T.:
  Real-Time Observation of Collector Droplet Oscillations during Growth of Straight Nanowires
  journal article in Web of Science
• KOLÍBAL, M.; KONEČNÝ, M.; LIGMAJER, F.; ŠKODA, D.; VYSTAVĚL, T.; ZLÁMAL, J.; VARGA, P.; ŠIKOLA, T.:
  Guided Assembly of Gold Colloidal Nanoparticles on Silicon Substrates Prepatterned by Charged Particle Beams
  journal article in Web of Science
• KOLÍBAL, M.; KALOUSEK, R.; NOVÁK, L.; VYSTAVĚL, T.; ŠIKOLA, T.:
  Controlled faceting in (110) germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth
  journal article in Web of Science
• KOLÍBAL, M.; VYSTAVĚL, T.; NOVÁK, L.; MACH, J.; ŠIKOLA, T.:
  In-situ observation of <110> oriented Ge nanowire growth and associated collector droplet behavior
  journal article in Web of Science
• KOLÍBAL, M.; MATLOCHA, T.; VYSTAVĚL, T.; ŠIKOLA, T.:
  Low energy focused ion beam milling of silicon and germanium nanostructures,
  NANOTECHNOLOGY, Vol.22, (2011), No.10, pp.105304-1-105304-8, ISSN 0957-4484
  journal article - other
• KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.:
  Stability of hydrogen-terminated silicon surface under ambient atmosphere,
  Applied Surface Science, Vol.256, (2010), No.11, pp.3423-2426, ISSN 0169-4332
  journal article - other
• KOLÍBAL, M.; ČECHAL, T.; KOLÍBALOVÁ, E.; ČECHAL, J.; ŠIKOLA, T.:
  Self-limiting cyclic growth of gallium droplets on Si(111),
  NANOTECHNOLOGY, Vol.19, (2008), No.46, pp.475606-1-475606-5, ISSN 0957-4484
  journal article - other
• MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T.:
  Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface,
  Surface Science, Vol.602, (2008), No.10, pp.1898-1902, ISSN 0039-6028
  journal article - other
• KOLÍBAL, M.; TOMANEC, O.; PRŮŠA, S.; PLOJHAR, M.; MARKIN, S.; DITTRICHOVÁ, L.; SPOUSTA, J.; BAUER, P.; ŠIKOLA, T.:
  TOF-LEIS spectra of Ga/Si: Peak shape analysis,
  Nuclear Instruments and Methods in Physics Research B, Vol.265, (2007), No.2, pp.569-575, ISSN 0168-583X
  journal article - other
• KOLÍBAL, M.; PRŮŠA, S.; PLOJHAR, M.; BÁBOR, P.; POTOČEK, M.; TOMANEC, O.; KOSTELNÍK, P.; MARKIN, S.; BAUER, P.; ŠIKOLA, T.:
  In situ Analysis of Ga-ultra Thin Films by ToF-LEIS,
  Nuclear Instruments and Methods in Physics Research B, Vol.249, (2006), No.1-2, pp.318-321, ISSN 0168-583X, Elsevier
  journal article - other
• KOLÍBAL, M.; PRŮŠA, S.; BÁBOR, P.; ŠIKOLA, T.:
  Low energy ion scattering as a method for surface structure analysis,
  Jemná mechanika a optika, Vol.9, (2004), No.9, pp.262-265, ISSN 0447-6441
  journal article - other
• KOLÍBAL, M.; PRŮŠA, S.; BÁBOR, P.; ŠIKOLA, T.:
  ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111),
  Surface Science, Vol.566-568, (2004), No.9, pp.885-889, ISSN 0039-6028
  journal article - other

List of publications at Portal BUT

Abstracts of most important papers:

• KOLÍBAL, M.; KONEČNÝ, M.; LIGMAJER, F.; ŠKODA, D.; VYSTAVĚL, T.; ZLÁMAL, J.; VARGA, P.; ŠIKOLA, T.:
  Guided Assembly of Gold Colloidal Nanoparticles on Silicon Substrates Prepatterned by Charged Particle Beams
  journal article in Web of Science
  Colloidal gold nanoparticles represent technological building blocks which are easy to fabricate while keeping full control of their shape and dimensions. Here, we report on a simple two-step maskless process to assemble gold nanoparticles from a water colloidal solution at specific sites of a silicon surface. First, the silicon substrate covered by native oxide is exposed to a charged particle beam (ions or electrons) and then immersed in a HF-modified solution of colloidal nanoparticles. The irradiation of the native oxide layer by a low-fluence charged particle beam causes changes in the type of surface-terminating groups, while the large fluences induce even more profound modification of surface composition. Hence, by a proper selection of the initial substrate termination, solution pH, and beam fluence, either positive or negative deposition of the colloidal nanoparticles can be achieved
• KOLÍBAL, M.; KALOUSEK, R.; NOVÁK, L.; VYSTAVĚL, T.; ŠIKOLA, T.:
  Controlled faceting in (110) germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth
  journal article in Web of Science
  We show that the hexagonal cross-section of germanium nanowires grown in the (110) direction by physical vapor deposition is a consequence of minimization of surface energy of the collector droplet. If the droplet is lost or solidified, two (001) sidewall facets are quickly overgrown and the nanowire exhibits a rhomboidal cross-section. This process can be controlled by switching between the liquid and solid state of the droplet, enabling the growth of nanowires with segments having different cross-sections. These experiments are supported by in-situ microscopic bservations and theoretical model
• KOLÍBAL, M.; VYSTAVĚL, T.; NOVÁK, L.; MACH, J.; ŠIKOLA, T.:
  In-situ observation of <110> oriented Ge nanowire growth and associated collector droplet behavior
  journal article in Web of Science
  Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-liquid-solid process in h110i directions both on Ge(100) and Ge(111) substrates if very low supersaturation in the collector droplet is ensured. This can be provided if thermal evaporation is utilized. Such a behavior is also in agreement with earlier chemical vapor deposition experiments, where h110i oriented wires were obtained for very small wire diameters only. Our conclusions are supported by in-situ observations of nanowire kinking towards h111i direction occurring more frequently at higher evaporation rates
• KOLÍBAL, M.; MATLOCHA, T.; VYSTAVĚL, T.; ŠIKOLA, T.:
  Low energy focused ion beam milling of silicon and germanium nanostructures,
  NANOTECHNOLOGY, Vol.22, (2011), No.10, pp.105304-1-105304-8, ISSN 0957-4484
  journal article - other
  In this paper focused ion beam milling of very shallow nanostructures in silicon and germanium by low energy Ga+ ions is studied with respect to ion beam and scanning parameters. It has been found that, using low energy ions, many scanning artefacts can be avoided and, additionally, some physical effects (e.g. redeposition and ion channelling) are significantly suppressed. The structures milled with low energy ions suffer less subsurface ion beam damage (amorphization, formation of voids) and are thus more suitable for selected applications in nanotechnology.
• KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.:
  Stability of hydrogen-terminated silicon surface under ambient atmosphere,
  Applied Surface Science, Vol.256, (2010), No.11, pp.3423-2426, ISSN 0169-4332
  journal article - other
  In this paper a comparative study of different wet-chemical etching procedures of vicinal Si(1 1 1) surface passivation is presented. The stability against oxidation under ambient atmosphere was studied by X-ray photoelectron spectroscopy and atomic force microscopy. The best results were achieved by the buffered HF etching and the final smoothing of the surface by hot (72 C) NH4F. The procedures consisting of a large number of etching steps were unsatisfactory, since the probability of contamination during each step was increasing. The passivated surface was stable against oxidation for at least 3 h under ambient atmosphere.