doc. Ing. Stanislav Průša, Ph.D.

E-mail:   prusa@fme.vutbr.cz 
WWW:   http://physics.fme.vutbr.cz/ufi.php?Action=0&Id=159
Dept.:   Institute of Physical Engineering
Dept. of Physics of Surfaces and Nanostructures
Position:   Associate Professor
Room:   A2-old/512

Education and academic qualification

  • 1996, Ing., Faculty of Mechanical Engineering BUT, Physical Engineering.
  • 2003, PhD., Brno University of Technology, Physical and Material Engineering.
  • 2011, doc., Assistent professor, Brno University of Technology, Faculty of Mechanical Engineering, applied physics.

Career overview

  • 1999-as yet, research assistant, FMI BUT.

Pedagogic activities

  • 1999-as yet, lectures in the frame of Socrates Erasmus programme at collaborating research groups (Aston University (GB), University of Bari (Italy), Johannes Kepler University Linz (Austria).
  • Specialized practicum I.
  • Modern physics IV.
  • General physics II (electricity and magnetism).

Scientific activities

  • LEIS - Low Energy Ion Scattering.
  • Element and structure analysis of solid state surfaces and ultrethin films (Ga/Si).
  • Analysis of CVD graphene contamination with atomic depth resolution by LEIS.

University activities

  • 2006 head of advanced physical laboratories at FMI BUT.

Prizing by scientific community

  • 2001 – the award of the Dean of the Faculty of Mechanical Engineering at BUT for the fourth place in the competition of the faculty postgraduate works.

Projects

  • GACR 202/05/P288: Low Energy ion Scattering LEIS.
  • Inorganic nanomaterials and nanostructures, (2005-2010)
  • Functional hybrid semiconductor and conductor nanosystems with organic materials, (2007-2011)
  • MEYS 2008: Upgrade of experimental systems for teaching.
  • MEYS 2009: Development of basic and advanced laboratories in connection with nanotechnology.
  • AKTION, Czech republic Austria, 2014, 2015, Study of catalytic systems by LEIS.

Sum of citations (without self-citations) indexed within ISI Web of Knowledge

20

Sum of other citations (without self-citations)

0

Supervised courses:

Publications:

  • SPOUSTA, J.; PRŮŠA, S.; TROJÁNEK, A.; DUB, P.:
    Kvalitní učebnice fyziky - důležitá opora výuky,
    Československý časopis pro fyziku, Vol.62, (2012), No.5-6, pp.421-425, ISSN 0009-0700
    journal article - other
  • JULIŠ, M.; KUSMIČ, D.; POSPÍŠILOVÁ, S.; PRŮŠA, S.; OBRTLÍK, K.; DLUHOŠ, J.; PODRÁBSKÝ, T.:
    Study of Surface Relief Evolution in Cyclically Strained Superalloy IN738LC Using advanced Experimental Techniques,
    Chemické listy, Vol.105, (2011), No.S, pp.814-815, ISSN 0009-2770, Chemické listy
    journal article - other
  • BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T.:
    Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling,
    Nuclear Instruments and Methods in Physics Research B, Vol.269, (2011), No.3, pp.369-373, ISSN 0168-583X
    journal article - other
  • MATLOCHA, T.; PRŮŠA, S.; KOLÍBAL, M.; BÁBOR, P.; PRIMETZHOFER, D.; MARKIN, S.; BAUER, P.; ŠIKOLA, T.:
    A study of a LEIS azimuthal scan behavior: Classical dynamics simulation,
    Surface Science, Vol.604, (2010), No.21-22, pp.1906-1911, ISSN 0039-6028
    journal article - other
  • POLČÁK, J.; ČECHAL, J.; BÁBOR, P.; URBÁNEK, M.; PRŮŠA, S.; ŠIKOLA, T.:
    Angle-resolved XPS depth profiling of modeled structures: testing and improvement of the method,
    Surface and Interface Analysis, Vol.42, (2010), No.5-6, pp.649-652, ISSN 0142-2421
    journal article - other

List of publications at Portal BUT

Abstracts of most important papers:

  • TOPINKA, S.; PRŮŠA, S.:
    Posílení experimentální činnosti žáků při výuce tématického celku - magnetismus,
    Československý časopis pro fyziku, Vol.62, (2012), No.5-6, pp.413-415, ISSN 0009-0700
    journal article - other

    Contribution deals with the general relationships between practical experimental activity of pupils and process of transfer of knowledge to young generation.
  • BÁBOR, P.; DUDA, R.; PRŮŠA, S.; MATLOCHA, T.; KOLÍBAL, M.; ČECHAL, J.; URBÁNEK, M.; ŠIKOLA, T.:
    Depth resolution enhancement by combined DSIMS and TOF-LEIS profiling,
    Nuclear Instruments and Methods in Physics Research B, Vol.269, (2011), No.3, pp.369-373, ISSN 0168-583X
    journal article - other

    A combination of dynamic secondary ion mass spectroscopy (DSIMS) and time-of-flight low-energy ion scattering (TOF-LEIS) has been applied to acquire a composition depth profile of MoSi multilayers. During the sequential Ar+ sputtering secondary ions were monitored while in-between the sputtering cycles the TOF-LEIS spectra of scattered He neutrals were acquired. All the measured TOF-LEIS spectra versus sputtering time were displayed in one bitmap from which the depth profiles for different scattering depths were derived and analyzed. Analyzing the TOF-LEIS spectra of He particles scattered from the areas below the layer altered by ion-beam mixing led to an improvement of the depth resolution. In this way the resolution limits due to mixing phenomena can be overcome. Finally, the direct comparison of the DSIMS and TOF-LEIS depth profiles was carried out.
  • MARKIN, S.; PRIMETZHOFER, D.; PRŮŠA, S.; BRUNMAYR, M.; KOWARIK, G.; AUMAYR, F.; BAUER, P.:
    Electronic interaction of very slow light ions in Au: Electronic stopping and electron emission,
    PHYSICAL REVIEW B, Vol.78, (2008), No.19, pp.195122-1-195122-6, ISSN 1098-0121
    journal article - other

    Electronic stopping and ion-induced electron emission during the interaction of slow (v<0.1 a.u.) H+ and D+ ions with polycrystalline Au targets have been investigated. Electronic stopping is deduced from time-of-flight low-energy ion scattering measurements in backscattering geometry using polycrystalline films of several nanometers thick. Current measurements are performed to determine the ion-induced electron emission yield. Both in electronic stopping and in ion-induced electron emission we find a rather sharp, distinctive threshold velocity of ~0.19 a.u. for specific excitation and emission of 5d electrons. Below this threshold the projectiles interact exclusively with the 6s electrons.
  • PRŮŠA, S.; KOLÍBAL, M.; BÁBOR, P.; MACH, J.; ŠIKOLA, T.:
    Analysis of thin films by TOF-LEIS,
    ACTA PHYSICA POLONICA A, Vol.111, (2007), No.3, pp.335-341, ISSN 0587-4246
    journal article - other

    In the paper the design and application of a TOF-LEIS instrument built into an UHV complex deposition and analytical apparatus is described. A special attention is aimed at demonstrating the ability of TOF-LEIS to analyse near-to-surface layers of thin films prepared both ex-situ and in-situ. Additionally, the monitoring of diffusion processes close to a sample surface by this technique is presented. It is shown that the broadening of peaks in TOF-LEIS spectra can be attributed to multiple scattering and inelastic losses of ions in deeper layers. As a result of that, the peak width of ultrathin films depends on their thickness.
  • DRAXLER, M.; MARKIN, S.; KOLÍBAL, M.; PRŮŠA, S.; ŠIKOLA, T.; BAUER, P.:
    High resolution time-of-flight low energy ion scattering,
    Nuclear Instruments and Methods in Physics Research B, Vol.230, (2005), pp.398-401, ISSN 0168-583X, Elsevier
    journal article - other

    Low energy ion scattering (LEIS) is a well known technique for quantitative composition and structure analysis. Two different detection methods can be used in a LEIS experiment, i.e. an electrostatic analyzer or a time-of-flight (TOF) spectrometer. Both techniques have specific advantages. Nevertheless, the time-of-flight technique surpasses usual electrostatic analyzers used in LEIS in terms of energy resolution.The possibility to measure ions and neutrals, and the better energy resolution permit to study neutralization or charge exchange processes in much more detail. Here we present a TOF LEIS setup with an energy resolution of better than 0.4% for 3 keV He ions and report experimental results for 3 keV He ions backscattered from a polycrystalline Cu target. The resulting ion spectrum shows interesting inherent features, which are analyzed. Possible causes for the appearance of these features are discussed.