Ing. Stanislav Voborný, Ph.D.
E-mail:   voborny@fme.vutbr.cz  Dept.:   Institute of Physical Engineering Position:   Assistant Professor Room:   A2/509

Supervised courses:

• (K-FYZ)

Publications:

• MACH, J.; ŠAMOŘIL, T.; KOLÍBAL, M.; ZLÁMAL, J.; VOBORNÝ, S.; BARTOŠÍK, M.; ŠIKOLA, T.:
  Optimization of ion-atomic beam source for deposition of GaN ultrathin films
  journal article in Web of Science
• MACH, J.; ŠAMOŘIL, T.; VOBORNÝ, S.; KOLÍBAL, M.; ZLÁMAL, J.; SPOUSTA, J.; DITTRICHOVÁ, L.; ŠIKOLA, T.:
  An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum,
  Review of Scientific Instruments, Vol.82, (2011), No.8, pp.083302-1-083302-7, ISSN 0034-6748
  journal article - other
• ČECHAL, J.; MACH, J.; VOBORNÝ, S.; KOSTELNÍK, P.; BÁBOR, P.; SPOUSTA, J.; ŠIKOLA, T.:
  A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water,
  Surface Science, Vol.601, (2007), No.9, pp.2047-2053, ISSN 0039-6028
  journal article - other
• VOBORNÝ, S.; KOLÍBAL, M.; MACH, J.; ČECHAL, J.; BÁBOR, P.; PRŮŠA, S.; SPOUSTA, J.; ŠIKOLA, T.:
  Deposition and in-situ charakterization of ultra-thin films,
  Thin Solid Films, Vol.459, (2004), No.1-2, pp.17-21, ISSN 0040-6090
  journal article - other

List of publications at Portal BUT

Abstracts of most important papers:

• MACH, J.; ŠAMOŘIL, T.; VOBORNÝ, S.; KOLÍBAL, M.; ZLÁMAL, J.; SPOUSTA, J.; DITTRICHOVÁ, L.; ŠIKOLA, T.:
  An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum,
  Review of Scientific Instruments, Vol.82, (2011), No.8, pp.083302-1-083302-7, ISSN 0034-6748
  journal article - other
  The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions
• ČECHAL, J.; MACH, J.; VOBORNÝ, S.; KOSTELNÍK, P.; BÁBOR, P.; SPOUSTA, J.; ŠIKOLA, T.:
  A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water,
  Surface Science, Vol.601, (2007), No.9, pp.2047-2053, ISSN 0039-6028
  journal article - other
  Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.
• VOBORNÝ, S., MACH, J., KOLÍBAL, M., ČECHAL, J., BÁBOR, P., POTOČEK, M., ŠIKOLA, T.:
  A study of Early Periods of GaN Ultrathin Film Growth,
  New Trends in Pysics, pp.270-273, ISBN 80-7355-024-5, (2004), VUT v Brně
  conference paper
  akce: NTF 2004, Brno, 11.11.2004-12.11.2004
  A study of Early Periods of GaN Ultrathin Film Growth
• VOBORNÝ, S.; MACH, J.; ČECHAL, J.; KOSTELNÍK, P.; TOMANEC, O.; BÁBOR, P.; SPOUSTA, J.; ŠIKOLA, T.:
  Application of Complex UHV Apparaturus in a Study of Low-tepmerature Gallium-nitride Ultrathin Film Growth,
  Jemná mechanika a optika, Vol.9, (2004), No.9, pp.265-269, ISSN 0447-6441
  journal article - other
  Paper deals with the application of Complex UHV Apparaturus in a Study of Low-tepmerature Gallium-nitride Ultrathin Film Growth
• VOBORNÝ, S.; KOLÍBAL, M.; MACH, J.; ČECHAL, J.; BÁBOR, P.; PRŮŠA, S.; SPOUSTA, J.; ŠIKOLA, T.:
  Deposition and in-situ charakterization of ultra-thin films,
  Thin Solid Films, Vol.459, (2004), No.1-2, pp.17-21, ISSN 0040-6090
  journal article - other
  Paper deals with the deposition and in-situ charakterization of ultra-thin films