doc. Ing. Miroslav Bartošík, Ph.D.
E-mail:   bartosik@fme.vutbr.cz  WWW:   http://physics.fme.vutbr.cz/ufi.php?Id=165 Dept.:   Institute of Physical Engineering Position:   Associate Professor

Supervised courses:

• Planning and Evaluation of Experiments (TPX)

Publications:

• KOLÍBAL, M.; ČECHAL, J.; BARTOŠÍK, M.; MACH, J.; ŠIKOLA, T.:
  Stability of hydrogen-terminated silicon surface under ambient atmosphere,
  Applied Surface Science, Vol.256, (2010), No.11, pp.3423-2426, ISSN 0169-4332
  journal article - other
• BARTOŠÍK, M.; KOLÍBAL, M.; ČECHAL, J.; MACH, J.; ŠIKOLA, T.:
  Selective growth of metallic nanostructures on surfaces patterned by AFM local anodic oxidation,
  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol.9, (2009), No.10, pp.5887-5890, ISSN 1533-4880
  journal article - other
• ŠKODA, D.; KALOUSEK, R.; TOMANEC, O.; BARTOŠÍK, M.; BŘÍNEK, L.; ŠUSTR, L.; ŠIKOLA, T.:
  Studium optických vlastností nanostruktur pomocí mikroskopie blízkého pole,
  Jemná mechanika a optika, Vol.54, (2009), No.7-8, pp.219-222, ISSN 0447-6441
  journal article - other
• BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; KALOUSEK, R.; JÁNSKÝ, P.; ZLÁMAL, J.; SPOUSTA, J.; DUB, P.; ŠIKOLA, T.:
  Role of humidity in local anodic oxidation: A study of water condensation and electric field distribution,
  PHYSICAL REVIEW B, Vol.79, (2009), No.19, pp.195406-195412, ISSN 1098-0121
  journal article - other
• BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; KALOUSEK, R.; JÁNSKÝ, P.; ZLÁMAL, J.; SPOUSTA, J.; ŠIKOLA, T.:
  The influence of humidity on the kinetics of local anodic oxidation,
  Journal of Physics: Conference Series, Vol.61, (2007), pp.75-79, ISSN 1742-6588
  journal article - other
• ČERVENKA, J.; KALOUSEK, R.; BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; ŠIKOLA, T.:
  Fabrication of nanostructures on Si(100) and GaAs(1 0 0) by local anodic oxidation,
  Applied Surface Science, Vol.253, (2006), No.5, pp.2373-2378, ISSN 0169-4332
  journal article - other
• KALOUSEK, R., ČERVENKA, J., BARTOŠÍK, M., ŠKODA, D., ŠIKOLA, T.:
  Fabrication of nanostructures on Si(100) and GaAs(100) by local anodic oxidation,
  New Trend in Physics, pp.226-229, ISBN 80-7355-024-5, (2004), VUT v Brně
  conference paper
  akce: NTF 2004, Brno, 11.11.2004-12.11.2004
• KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BARTOŠÍK, M., TOMANEC, O., ŠIKOLA, T.:
  Growth of gallium on sillicon: A TOF-LEIS and AFM study,
  New Trend in Physics, pp.230-233, ISBN 80-7355-024-5, (2004), VUT v Brně
  conference paper
  akce: NTF 2004, Brno, 11.11.2004-12.11.2004
• ŠKODA, D., KALOUSEK, R., BARTOŠÍK, M., MATUROVÁ, K., ŠIKOLA, T.:
  Fabrication of Nanostructures by AFM,
  EVC'03 Abstracts, pp.243-244, (2003), EVC
  conference paper
  akce: European Vacuum Congress, Berlin, 23.06.2003-26.06.2003

List of publications at Portal BUT

Abstracts of most important papers:

• BARTOŠÍK, M.; KOLÍBAL, M.; ČECHAL, J.; MACH, J.; ŠIKOLA, T.:
  Selective growth of metallic nanostructures on surfaces patterned by AFM local anodic oxidation,
  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, Vol.9, (2009), No.10, pp.5887-5890, ISSN 1533-4880
  journal article - other
  We report on an alternative approach for the fabrication of metallic nanostructures: a selective growth on silicon substrates patterned by local anodic oxidation using atomic force microscopy. Our method represents a maskless, four-step process which combines a top-down and bottom-up approach. The dimensions of both the oxide lines and metallic elements can be controlled during the technological process. In this paper we demonstrate the preparation of gallium and cobalt structures on silicon substrates but this method can be extended to other combinations of metals and substrates enabling thus the fabrication of ordered nanostructures of various compositions and properties on locally oxidized surfaces.
• BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; KALOUSEK, R.; JÁNSKÝ, P.; ZLÁMAL, J.; SPOUSTA, J.; DUB, P.; ŠIKOLA, T.:
  Role of humidity in local anodic oxidation: A study of water condensation and electric field distribution,
  PHYSICAL REVIEW B, Vol.79, (2009), No.19, pp.195406-195412, ISSN 1098-0121
  journal article - other
  This paper deals with the analysis of the influence of humidity on the process of local anodic oxidation carried out by atomic force microscope (AFM) on GaAs (100) surfaces. Recent experiments have shown that the height and half width of oxide nanolines do not increase monotonously with relative humidity, but for lower relative humidities (<50%) the lines comparable in size to those prepared at 90% were obtained. However, their height and width along the lines revealed significant variations. To better understand these phenomena, the AFM force-distance spectroscopy measurements together with computer simulations of an electric-field distribution and water bridge formation between the tip and the substrate at different relative humidities were carried out. Our experiments on AFM force-distance spectroscopy have not proved an enhanced water condensation between the tip and the surface at lower humidities. However, the simulations of the electric field in the vicinity of the tip at the early stages of the oxidation process at low relative humidities showed an increase in the average intensity in the oxide layer promoting the diffusion of oxidizing species toward the substrate and, hence, the formation of oxide lines under these conditions. Finally, our simulations on water bridge variations along the tip track showed that at lower humidities there are higher relative standard deviations in the size of the water bridge while the tip is being moved along the surface. This indicates why the oxide lines showed a bigger variability in size.
• BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; KALOUSEK, R.; JÁNSKÝ, P.; ZLÁMAL, J.; SPOUSTA, J.; ŠIKOLA, T.:
  The influence of humidity on the kinetics of local anodic oxidation,
  Journal of Physics: Conference Series, Vol.61, (2007), pp.75-79, ISSN 1742-6588
  journal article - other
  In this paper the influence of relative humidity on fabrication of nanostructures at GaAs (100) surfaces by local anodic oxidation (LAO) is reported. The attention was paid both to the dimensions of oxide nanolines prepared at different relative humidities for tip-surface voltages of 6 - 9 V and tip speeds of 10 - 200 nm/s, and to the profiles corresponding to line trenches (etched in HCl after the nanoxidation). Contrary to the expectations the height and the half-width of oxide nanolines did not increase with relative humidity in the whole interval from 35% to 90%, but for lower relative humidities (< 50%) the lines were comparable in size to those prepared at 90%. However, this was accompanied with instabilities in the oxidation process resulting most probably from enhanced size variations of the water meniscus between the tip and the surface at these low humidities.
• ČERVENKA, J.; KALOUSEK, R.; BARTOŠÍK, M.; ŠKODA, D.; TOMANEC, O.; ŠIKOLA, T.:
  Fabrication of nanostructures on Si(100) and GaAs(1 0 0) by local anodic oxidation,
  Applied Surface Science, Vol.253, (2006), No.5, pp.2373-2378, ISSN 0169-4332
  journal article - other
  Atomic force microscopes have become useful tools not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this paper, the application of AFM for fabrication of nanostructures by local anodic oxidation (LAO) of Si(1 0 0) and GaAs(1 0 0) surfaces is presented. A special attention is paid to finding relations between the size of oxide nanolines (height and half-width) and operational parameters as tip-sample voltage and tip writing speed. It was demonstrated that the formation of silicon oxide lines obeys the Cabrera-Mott theory, i.e. the height of the lines grow, linearly with tip-sample voltage and is inversely proportional to logarithm of tip writing speed. As for GaAs substrates, the oxide line height grows linearly with tip-sample voltage as well but LAO exhibits a certain deviation from this theory. It is shown that the selective chemical etching of Si or GaAs ultrathin films processed by LAO makes it possible to use these films as nanolithographic masks for further nanotechnologies, e.g. fabrication of metallic nanostructures by ion-beam bombardment. The ability to control LAO and tip motion can be utilized in fabrication of complex nanostructures finding their applications in nanoelectronic devices, nanophotonics and other high-tech areas.